half bridge gan driver.
*1 Independent high-side and low-side TTL logic inputs
* 1.2 A / 5 A peak source/sink current
* High-side floating bias voltage rail
Operates up to 100 VDC
* Merchant telecom rectifiers
* Merchant DC/DC
* Closed loop stepper motor drive
* Baseband unit (BBU) <.
The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement m.
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